摘要
进行了MEMS开关的辐照试验,并对结果进行了分析。所述的MEMS开关采用单晶硅悬臂梁结构实现金属电极接触,工作电压小于50V,最大工作频率大于10kHz。进行了中子辐照和γ辐照实验,其中中子注量为2.73×1013cm-2,γ总剂量为50krad(Si)。并通过对MEMS开关辐照前后性能的测试,获得了辐照对MEMS开关性能影响的实验数据。结果表明,在辐照剂量大于10krad(Si)时MEMS开关性能有明显变化。借鉴国外的相关研究成果,对MEMS器件的辐照失效机理进行了初步分析。
Radiation experiment of MEMS switch is analyzed in this paper.The MEMS switch in-volved in the paper is a kind of vertical switch with single crystal cantilever and metal-metal con-tact electrodes.The operating voltage of the switch is less than50V and the operating frequency is up to10kHz .Radiation experiments include neutron radiation with the dose of2.73×10 13 cm -2 andγradiation with the dose of50krad(Si ).The switch is tested before and after radiation and main performance like pull-in voltage,switching delay is recorded.Finally,it is demonstrated that the performance of the switch changes significantly when the radiation dose exceed10krad(Si ).
出处
《微纳电子技术》
CAS
2002年第7期31-34,共4页
Micronanoelectronic Technology
