摘要
SAW器件要求具有低延时温度系数、高机电耦合系数和高传播特性的良好基片材料。迄今为止,还没有一种材料能满足上述要求,为此,人们进行了大量的努力来寻求解决。本文主要叙述具有零温度系数的LST一切石英、双旋转切LiNbO_3、63.6°Y一切LiTaO_3单晶新切型和几种层状结构基片材料的制法和性能。并列举了实验器件的特性。
SAW devices require good substrate materials with low temperature coefficient of delay, high electromechanical coupling coefficient and fast propagation characteristics. So far.there are few single materials which can meet all the above requirements, so people have made many efforts to solve this problem. This paper reviews the preparation aad properties of new cut of LST-cut quartz, double rotated cut LiKbC3, 63.6?Y-cut LiTaCh and several layer structure substrate materials with zero temperature coefficient. The performances of some experimental devices are also presented.
出处
《压电与声光》
CSCD
北大核心
1991年第1期14-21,共8页
Piezoelectrics & Acoustooptics
关键词
声表面波器件
温度系数
基片材料
SAW devices, substrate materials, temperaturt coefficient
