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热载流子退化对MOS器件的影响 被引量:1

The Effect of Hot Carrier Degradation on the MOS Devices
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摘要 介绍了评价热载流子注入效应的加速寿命试验,针对具体的工艺线,提取了MOS管加速寿命试验的模型参数,以阈值电压变化10 mV为失效判据,分别对0.8 μm和0.6 μm工艺线的热载流子注入效应进行了评价。整个测试过程由程序控制,设备精度高,使用简便,适用于亚微米和深亚微米工艺线的可靠性评价。 This paper introduces the Accelerated Lifetime Experiment assessing hot carrier injection effect, abstracted MOS device model parameters of Accelerated Lifetime Experiment in specific process. According to the failure criterion of threshold voltage shift 10mV, evaluating hot carrier injection effect of 0. 8 μm and 0. 6μm process separately, the whole test is controlled by programme. The test instrument has high precision, and convenient in use. It is suitable for the reliability assessment of sub - micrometer and deep sub - micrometer processes.
出处 《电子产品可靠性与环境试验》 2002年第1期14-17,共4页 Electronic Product Reliability and Environmental Testing
关键词 热载流子 退化 MOS器件 注入 加速寿命试验 阈值电压 可靠性 集成电路 hot carrier injection accelerated lifetime experiment threshold voltage reliability assessment
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参考文献5

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同被引文献10

  • 1孔学东,恩云飞,章晓文,张晓明.微电子生产工艺可靠性评价与控制[J].电子产品可靠性与环境试验,2004,22(3):1-5. 被引量:7
  • 2HU C-M, SIMON C, HSU F-C, et al. Hot electron- induced MOSFET degradation model, monitor, and improvement [J]. IEEE Trans Elec Dev, 1985, 32 (2) : 375-386.
  • 3HEREMANS P, BEI.LENS R, GROESENEKEN G, et al. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET' s [J]. IEEE Trans Elec Dev, 1988, 35(12): 2194-2209.
  • 4PAGES M, MILANOWSKI R, SNYDER E, et al. Unified model for n-channel hot-carrier degradation under different degradation mechanisms [C] // Dallas IEEE/IRPS. 1996: 289-293.
  • 5HEREMANS P, BELLENS R, GROESENEKEN G, et al. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET' s [J]. IEEE Trans Elec Dev, 1988, 135(12) : 2194-2209.
  • 6ASLAM M. Common origin for electron and hole traps in MOS device [J]. IEEE Trans Elec Dev, 1987, 34(12) : 2535-2538.
  • 7JESD28-A. Procedure for measuring N-channel MOSFET hot-carrier-induced degradation under DC stress [S]. JEDEC Sol Sta Technol Assoc, Dec, 2001.
  • 8JESD28-1. N-channel MOSFET hot carrier data analysis [S]. JEDEC Sol Sta Technol Assoc, Sept, 2001.
  • 9章晓文,恩云飞,林晓玲.电子信息技术的理论与应用[C]//中国电子学会第十四届青年学术年会论文集,广州,2008:61-64.
  • 10朱炜玲,黄美浅,章晓文,陈平,李观启.热载流子效应对n-MOSFETs可靠性的影响[J].华南理工大学学报(自然科学版),2003,31(7):33-36. 被引量:6

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