摘要
讨论了外延及注入制作的薄层 Ga As Hall器件如何获得高的磁线性度 .Ga As Hall器件的磁线性度在高磁场下会有偏离 ,但可以通过外延及注入的过渡层对有源区进行补偿 ,在合适的有源区和过渡区的浓度和厚度分布中 ,可以得到在 2 .5 T的强磁场下 ,± 0 .0 4
How to fabricate hig h linearity Hall devices in a thin active layer via epitaxial growth and ion impl a ntation technology are studied and a goo d result is presented.Although the varia tion of Hall voltage with calibrated mag netic flux density shows the increasing linearity error in high magnetic field,i f the proper carrier concentration distr ibution and its thickness in the active region and transition region can be cont rolled via implantation and epitaxial gr o wth,to compete the current in the active region,the linearity will be ±0.04% in high magnetic field of 2.5T.
关键词
Hall器件
霍尔器件
砷化镓
线性度
Hall devices
active region and transition region dist ribution
the linearity of ±0.04% in a hi gh magnetic field of 2.5T
