摘要
本文研究了退火对辉光放电制备的非晶氮化硅(GD a-SiN_x∶H)材料光电导的影响、用光电导的方法给出材料的吸收系数、带尾态宽度等参数,指出退火是消除无规堆垛引起的局域态的有效方法。
In this paper,we study the effects of annealing on photoconductivity of GDa-SiN_x:H films.By measuring the photoconductivity,we can give the absorptioncoefficient and width of tail states of samples,and is it indicated that the annealingis an effective method which can clear up the localized states produced by randomaccumulation
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1991年第1期72-76,共5页
Journal of Inorganic Materials
