摘要
用傅里叶变换光谱仪在15K和230～620cm^(-1)范围内研究了不同含Fe量的P型掺B多晶硅的远红外吸收光谱.观测和分析了Si中受主(B)基态到P_(3/2)价带相关的激发态系列的跃迁.实验结果表明,随着Fe浓度的增加,B受主激发谱的吸收强度显著减弱.证明Fe-B对的形成和Fe杂质在晶粒边界的可能的积累.实验还观测到P型Si(B)中不同含Fe量时607cm^(-1)处C局域振动模的吸收变化,讨论了Fe杂质对C振动吸收的影响.
Far infrared absorption spectra in P type B-doped polycrystalline silicon with a variable concentration of iron (25ppmW to 500 ppmW) have been studied by means of Fourier transform spectroscopy measurements in the range of 230cm^(-1)～620 cm^(-1) at 15K. Lines related to the presence of B in Si and due to the transitions from the gr ound state to excited states associated with P_(3/2) valence band have been detected and analyzed. It is shown that the decrease of intensity of optical absorption in the region of excitation spectrum of boron acceptors versus Fe content may be considered as the first optical absorption evidence of the formation of Fe-B complexes and accumulation of the Fe at the grain boundaries in polycrystalline silicon. Absorption meagurements on local vibration mode of the carbon at 607 cm^(-1) containing variable amounts of iron Ihave been carried out and discussed.
出处
《红外研究》
CSCD
北大核心
1989年第5期321-326,共6页
