摘要
研究了退火对α-Si_xC_(1-x):H薄膜红外吸收和光致发光性质的影响.实验结果表明:低温退火使与氢有关的红外吸收和积分发光强度增加;而高温退火使与氢有关的红外吸收和积分发光强度减弱;同时,随着退火温度升高,光致发光光谱的峰值能量位置移向低能.文中对退火引起红外吸收和光致发光性质的变化机理进行了讨论。
The effect of annealing on the properties of infrared absorption (IR) and photoluminescence(PL) for a-Si_xC_(1-x): H films has been investigated. The experimental results show that the IR related to hydrogen and the integrated PL intensities increase after annealing at low temperatures, and decrease rapidly after annealing at high temperatures. At the same time, the peak energy positions of PL spectra shift toward lower energies with the increase of the annealing temperature. The mechanism of the changes of IR and PL properties caused by annealing has been discussed.
出处
《红外研究》
CSCD
北大核心
1989年第3期165-170,共6页
