摘要
The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.
用数值分析的方法讨论了中性陷阱对超薄场效应晶体管 (MOSFET)隧穿电流的影响 .中性陷阱引起势垒的变化在二氧化硅的导带中形成一个方形的势阱 .对于不同的势垒变化 ,计算了电子隧穿氧化层厚度为 4nm的超薄金属氧化物半导体结构的电流 .结果表明 ,中性陷阱对隧穿电流的影响不能被忽略 ,中性陷阱的存在使隧穿电流增加 ,并且通过这个简单的模型能够理解应变诱导漏电流的产生机制 .
基金
国家重点基础研究 ( No.G2 0 0 0 -0 36 5 0 3)
博士点基金 ( No.970 0 0 113)资助项目~~
