摘要
本文在对 p+ p p+ 结构薄膜全耗尽积累型 SOI MOS器件导电机理和基本特性研究的基础上 ,进一步研究了实验样品在 (2 7～ 30 0℃ )宽温区高温特性 ,理论和实验研究结果表明 p+ p p+ 结构薄膜全耗尽积累型 SOI MOS器件实验样品在 (2 7～ 30 0℃ )
In this paper, Based on research of conduction mechanism and fundamental characteristics of p\++ p p\++ thin film full depletion accumulation mode SOI MOS devices, high temperature characteristics of experimental, Samples in (27～300℃) wide temperature range are studied. Research results obtained from theory and experiment show that the experimental samples with p\++ p p\++ structure have excellent high temperature characteristics in (27～300℃) wide temperature range.
出处
《电子器件》
CAS
2002年第1期18-21,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金资助重点项目 (批准号:6973 60 2 0 )
模拟集成电路国家级重点实验室资助项目(批准号 :2 0 0 0 JS 0 9.8.1JW0 60 4)
