摘要
以CdSe纳米晶体为核 ,用胶体化学的方法 ,通过化学替代反应 ,获得了不同阱层或不同垒层的CdSe HgSe CdSe量子点量子阱 (QDQW)晶体 .紫外 可见光吸收谱研究表明 ,通过调节QDQW中间HgSe阱层的厚度从 0 .9nm至 0 ,可以调节QDQW颗粒的带隙从 1.8变化至 2 .1eV ,实现QDQW纳米晶体的剪裁 .光致荧光 (PL)谱研究显示 ,QDQW形成后 ,CdSe HgSe纳米颗粒表面态得到钝化 ,显现出发光强度加强的带边荧光峰 .利用有效质量近似模型 ,对QDQW晶粒内部电子的 1s— 1s态进行了估算 。
Core\|shell structured CdSe/HgSe/CdSe quantum dot quantum well (QDQW) nanocrystals were synthesized and well controlled by a colloidal chemical method. The results of optical absorption studies show that with appropriate HgSe well thickness (from 0.9 nm to 0), it is possible to tailor the 1s\|1s transition energy of QDQW nanocrystals from 1.8 to 2.1 eV. The enhancement and blue shift of photoluminescence peak was observed, which was attributed to the quantum confinement effect of carriers in HgSe well. The 1s\|1s transition energies of QDQW nanocrystals have been estimated by the effective mass approximation method. The results are compared with the experimentally determined 1s\|1s energies. It is shown that the general trend observed in the experiments is well reflected in the calculation.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第4期877-881,共5页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :6 9890 2 2 5和 10 0 740 2 3)~~
