摘要
利用微细加工技术和双向薄膜沉积技术对钼尖场发射阵列阴极的工艺进行了较为细致的研究 ,并在专用的真空系统中对所得阵列阴极的发射性能进行了测试 ,得到了一定的场致发射电流密度值。测试中采用数据采集系统监测栅极电压、阳极电压、阳极电流和栅极电流 ,测量了阴极阵列的发射稳定性和发射噪声。对发射的失效机理进行了实验研究和分析 ,认为发射失效的主要原因在于栅极和基底之间的漏电 ,尖锥和栅极孔间的暗电流 ,电极间的放电和放气 ,以及环境真空度和尖锥的不均匀性等。
The research on fabrication process of Mo Field Emission Arrays (FEAs) using micro-manufacturing and thin-film technology was carried out and FEAs with uniform cone emitters were obtained. Then the emission properties of the arrays were tested with a specially designed vacuum system, considerable emission current was obtained. In the vacuum testing system, data acquisition system was adopted to monitor the gate voltage, anode voltage, anode current and gate current, the emission stability and emission noise of the FEAs were measured. The FEAs failure mechanism was also studied by analysing the SEM photographs of the destroyed chips. The main reasons for the failure can be attributed to the electric leakage between the gate and the substrate, dark current between tips and gate hole, discharge and arc between electrodes, ambient, pressure, ununiformity of the tips and so on. The results lay a good foundation for the further application research on RF devices and flat panel display.
出处
《液晶与显示》
CAS
CSCD
2002年第1期39-43,共5页
Chinese Journal of Liquid Crystals and Displays
基金
电科院基金项目资助 (DJ3.31 )
