摘要
对 GAT (Gate Associated Transistor)型高速高压功率开关管提出了一些新的结构改进设想 ,包括两种新的平面版图设计以及改变栅区掺杂浓度 ,以解决其最大集电极电流远小于常规双极功率管这个关键问题 ,并对此进行了计算机仿真及试验研究 .
Two kinds of layout designs and the method of lowering the impurity concentration of the gate region are proposed to improve the current rating of GATs.The experimental results show that the current rating will be improved by a factor of 1 6 by using the presently proposed layout with strip gate and grid emitter and improved by a factor of 1 08 when the diffused surface concentration of the gate region is reduced from 2×10 18 cm -3 to 2 5×10 17 cm -3 .The current rating can reach 1 5A/mm 2 by using layout with island gate and grid emitter,as is comparable with that of the conventional bipolar power transistors.
基金
北京市自然科学基金资助项目 ( No.4972 0 0 5 )~~
关键词
开关晶体管
栅辅助晶体管
结构设计优化
高流密度
gate associated transistor
current rating
layout
diffused surface concentration
