摘要
对采用电子束反应蒸镀方法在低温下在硅 (0 0 1)衬底上外延生长的ZnO薄膜的表面构像进行了原子力显微镜 (AFM)观察 ,分析研究不同的衬底温度对薄膜表面形貌及结构特性的影响。在 2 5 0℃衬底温度下获得的ZnO薄膜 ,膜表面平整 ,结构致密 ,表面平均不平整度小于 3nm ,说明在该衬底温度下获得的ZnO薄膜是高透明度、高质量。
Epitaxial growth of ZnO thin films was prepared by reactive e beam evaporation on Si (001) substrates at low temperature. The microstructures of ZnO thin films were investigated by atomic force microscope (AFM).The influences of growth temperature on the surface morphology and the microstructure of prepared ZnO films were studied. The results showed that the surface morphology and the crystal structure and the orientation of ZnO thin films were remarkably different at variation of growth temperature. Highly c axis oriented ZnO thin films with a flat and smooth surface and small line width (only 0 28°) of (002) X ray diffraction peak were obtained at growth temperature of 250℃. The average surface roughness is less than 3nm.
出处
《电子显微学报》
CAS
CSCD
北大核心
2002年第1期39-42,共4页
Journal of Chinese Electron Microscopy Society
基金
自然科学基金资助项目 (No :6960 60 0 0 6)
浙江省教委 (96112 0 3 )资助项目~~
