摘要
结合MEMS技术的发展历史 ,概括了当今硅基MEMS加工技术的发展方向。指出表面牺牲层技术和体硅加工技术是硅基MEMS加工技术的两条发展主线 ;表面牺牲层技术向多层、集成化方向发展 ;体硅工艺主要表现为键合与深刻蚀技术的组合 ,追求大质量块和低应力以及三维加工。SOI技术是新一代的体硅工艺发展方向 ;
Concerning the development history of MEMS technology, the present paper introduces a state-of-the-art developing direction of silicon-based MEMS machining, indicating that there are two main developing directions. One is sacrificial layers technology, and the other is bulk micromachining. Sacrificial layers technology is developing towards multiple layers and integration. Bulk-micromachining mainly includes combination of bonding and deep etching, pursuit to big mass and small stress, and three-dimensional fabrications technology which is the developing direction of new body-silicon technology. Standard process fabrication is becoming more and more important for MEMS study.
出处
《机械强度》
EI
CAS
CSCD
北大核心
2001年第4期523-526,共4页
Journal of Mechanical Strength
基金
国家重点基础研究发展规划 (973)项目---"集成微光机电系统研究"子项目 (G1 9990 331 1 0 9)
中科院创新性研究项目资助
关键词
微电子机械系统
牺牲层
体硅工艺
深刻蚀
Micro electro mechanical system
Sacrificial layers
Bulk micromachining technology
Deep etching
