摘要
氧化锌压敏电阻器漏电流宏观上与电压、温度有关,实质在于电阻体的微观结构。显微观察和X射线衍射分析表明,晶粒大小分布均匀,富铋相广布且其主要组成为γ-Bi_2O_3和α-Bi_2O_3时,其漏电流较低,适当地掺杂如SiO_2,Cr_2O_3,PbO,H_3BO_3,KNO_3等,减低降温速度和烧成后进行热处理,可使漏电流减至最低。
Leakage current of varistor is related to voltage and temperature, and caused by its microstructure. Results of microscopic examination and X-ray diffraction analysis show that the even grains, well distributed rich bismuth phases composed by γ-Bi_2O_3 and α-Bi_2O_3 may make leakage current little. By doping some impurities, e. g. , SiO_2, Cr_2O_3, PbO,H_3BO_3, KNO_3 etc., decresing rate of cooling, heattreating the sintered ceramic pieces, the leakage current in varistor can be controlled to least.
关键词
压敏电阻器
漏电流
氧化锌
烧结
Varistor
Leakage currents
Microstructure
Sintering
Formulations
Productive technology
