摘要
用准分子激光扫描原位淀积法制备了极薄薄膜 BIT/ p- Si(10 0 )和 PZT/ p- Si(10 0 ) ,借助于 X-射线衍射(XRD)和扫描电镜 (SEM)研究了薄膜的显微结构 ,并对这两种极薄铁电薄膜 Au/ BIT/ p- Si(10 0 )和 Au/ PZT/ p- Si(10 0 )的 J- V曲线温度特性进行了拟合分析讨论。模拟分析结果表明 ,在负温区 ,电流密度 J对温度 T有较强的依赖关系 ,但与通常欧姆电流温度关系不同。而在正温区 ,服从 J=K V2 关系 ,ε和 SCL C电流密度 J则与温度
The very thin films of PZT and BIT were prepared successfully on p silicon wafer using scanning excimer laser.SEM and X ray diffraction methods are used for the analyses of microstructure and the temperature characteristic of J V curves of the very thin films Au/PZT/p Si (100) and Au/BIT/p Si (100) are discussed.The results of the fitting curve show that,in the negative temperature region, J V curves shows the dependence on the relation between current J and temperature T but the J T curve is different from the temperature dependence of ohmic current.And in the positive temperature region,the current J is independent of temperature T ,it should be followed by a second square law region corresponding to space charge limit current (SCLC).
出处
《压电与声光》
CSCD
北大核心
2001年第6期453-456,共4页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目 (5 9972 0 10 )
武汉理工大学材料复合新技术国家重点实验室资助项目
关键词
铁电薄膜
电流温度特性
半导体材料
very thin ferroelectric film
current temperature characteristic
Sub 100 nm film
