摘要
讨论了低温共烧陶瓷基板薄膜金属化技术中，有效阻碍层的选择对基板共晶焊的剪切强度、互连阻抗、可焊性的影响。试验结果表明，Ti / Ni是一种高可靠性的阻碍层，且Ti / Ni / Au也是一种较理想的低温共烧陶瓷基板薄膜金属化结构。
The selection of effective barrier metals for thin-film metallized LTCC substrates is discussed. Barrier metals have some effects on shear strength, interconnection resistance and solder wttability, etc. The experiment results show that Ti/Ni is a highly reliable barrier metal and Ti/Ni/Au an ideal thin-film metallized structure for LTCC substrates.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2001年第4期14-15,共2页
Electronic Components And Materials
