摘要
晶体生长炉是晶体生长的基础。根据三硼酸锂 (LBO)、偏硼酸钡 (β BBO)等晶体生长的要求 ,我们设计制备了包含三温区的晶体生长炉。本文报道了关于该炉温场设计所考虑的基本问题和炉体材料的选择 ,给出了电气系统的基本框架及构件。实际测量表明 :该炉控温精度在上温区为± 0 .135℃ ,中温区为± 0 .0 9℃ ,下温区为± 0 .136℃ ,高温区炉温均匀度为 0 .86℃ ,低温区炉温均匀度为 - 0 .86℃。
Furnace is the base for crystal growth.Based on the basic requirements of crystal growth for oxide crystals such as lithium triborate (LBO),β-barium borate(β-BBO),we design and manufacture the three temperature zone furnace for crystal growth.In this paper,we reported the basic points for the design of temperature profile and the selection of furnace components.The sketch and elements of the electric system are listed too.Experimental results showed that the temperature fluctuations for three zones (from up down sequence)were ±0.135℃, ±0.09℃, ±0.136℃ respectively.And the temperature homoneity for high temperature zone is 0.86℃ and for low temperature zone is -0.86℃.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2001年第3期318-324,共7页
Journal of Synthetic Crystals
关键词
晶体生长
热场
三温区
控温精度
炉温均匀度
晶体炉
heat field
three-temperature zone
temperature control accuracy
uniformity
crystal furnace