摘要
采用原位水热化学合成法 ,在TiNi形状记忆合金表面制备了组成主要为TiO2 的绝缘膜 ,并对此绝缘膜的生长过程、形貌以及相结构等进行了研究。结果表明 ,该绝缘膜主要成分为Ti和O ,其相组成为TiO2 和TiO2 -x(x≤ 0 .2 )。随着绝缘膜保温时间的延长 ,绝缘膜逐渐增厚 ,可以达到 4～ 5 μm。适宜的保温温度约为 2 0 0℃ ,保温时间为 8～ 12h。当保温时间超过 16h时 ,绝缘膜开始产生裂纹。对绝缘膜电阻特性的测试结果表明 :绝缘膜电阻随保温时间增加而增大 ,在 2 0 0℃保温 12h后的绝缘膜电阻最大 ,其值为 8.33× 10
TiO 2 insulating films were grown by in situ hydrothermal chemistry technique. The growth process, morphology and microstructure of the films were investigated systematically. The results show that such films are mainly composed of TiO 2 and TiO 2- x ( x ≤0.2), with a maximal thickness of 4～5?μm. The optimal fabrication process of this growth technique is found to heat the shape memory alloys with the reaction liquid to 200?℃ for 8～12?h. Cracks have been found in the films when the holding time exceeded 16?h. The resistance increases with the holding time and has a maximum value of about 8.33×10 5?Ω after hold at 200?℃ for 12?h.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2001年第5期867-870,共4页
The Chinese Journal of Nonferrous Metals
