摘要
从单晶硅内氢杂质的引入 ,氢钝化施主 ,钝化受主 ,钝化缺陷等几方面对近年来单晶硅内氢杂质的特性研究进行了综述 ,强调了氢加速氧扩散、加速热施主与氧沉淀的形成等性质 ,讨论了氢在单晶硅内的存在状态及硅片在氢气氛中的退火特性。
Recent studies on hydrogen impurity in single crysta lline silicon were reviewed with focus on the introduction of hydrogen, on the p assivation donors, acceptors and defects. It was emphasized that the promotion of hydrogen to the oxygen dif fusion, to the thermal donor formation and to the oxygen precipitation. The stat es of hydrogen in silicon and the behavior of hydrogen annealed silicon wafers w ere also discussed.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2001年第6期452-458,共7页
Chinese Journal of Rare Metals
基金
国家自然科学基金资助项目(No .699710 14 )
关键词
单晶硅
氢
氢退火
红外光谱
Single crystalline, Hydrogen, Hydrogen annealing, Infrared spectrum, Defect
