摘要
采用脉冲微反技术研究了添加半导体氧化物对Ni基催化剂上CH_4、C_2H_6和C_2H_4的裂解积炭反应特性的影响。结果表明，n型半导体CeO_2的添加降低了CH_4和C_2H_6的积炭活性，而p型半导体Co_3O_4的添加则加速CH_4和C_2H_6的裂解积炭；而对于与CH4和C_2H_6活化机制不同的C_2H_4分子的活化，上述影响机制正好相反，n型半导体CeO_2的添加促进C_2H_4的裂解积炭反应，而p型半导体Co_3O_4的添加则抑制C_2H_4的裂解积炭反应。XPS分析表明，活性金属Ni与半导体氧化物之间存在的金属-半导体相互作用是这种影响机制的主要因素。
Influence of the additions of different type semiconductor oxides to Ni-based catalyst on the characteristics of carbon deposition of CH4, C2H6 and C2H4 cracking was studied by using pulse microreaction technique. It was discovered that, the addition of n-type semiconductor CeO2 to Ni catalyst would decrease carbon deposition activity of CH4 and C2H6 cracking, whereas the addition of p-type semiconductor Co3O4 would increase carbon deposition activity of CH4 and C2H6 cracking. On the other hand, the effect of semiconductor oxide additives on the characteristics of carbon deposition of C2H4 cracking is opposite to that of CH4 and C2H6 due to the different activated mechanism. XPS results reveal that there is a metal-semiconductor interaction (MScI) between active metal Ni and semiconductor oxide, which is the most important factor leads to the above phenomenon.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2001年第9期773-775,共3页
Acta Physico-Chimica Sinica
基金
国家重点基础研究发展规划资助项目(G1999022401)
