摘要
给出了一个用来计算复合电子发光薄膜中非晶二氧化硅层的电流密度的动力学模型 ,利用此模型和蒙特卡洛模拟 ,可以得到电子在不同的电场下通过非晶二氧化硅层时所需要的时间 ,然后给出了一些参数的经验值 ,计算得到了与实验基本相一致的理论结果。
A dynamical model of trapping detrapping process was developed to calculate the current density in a- SiO 2 at high field. The time of flying through SiO 2 layer at different fields was calculated by means of Monte Carlo method, then the empirical values of some parameters were given, and the calculation result of current density, which agreed closely with the experiment result, was gotten.
出处
《绵阳经济技术高等专科学校学报》
2001年第3期32-34,共3页
Journal of Mianyang College of Economy & Technology
