摘要
对于 Ga As MESFET和以 Ga As或 In P为衬底的 PHEMT的欧姆接触制备 ,虽均采用 Au-Ge- Ni系统 ,但其合金条件却因材料特性各异而不同。
MESFET on GaAs substrate and PHEMT on GaAs or InP substrate use the same Au-Ge-Ni alloy system in fabrication of ohmic contact,but the alloying conditions are different according to their materials characteristic.The best alloying condition including temperature and time was obtained by experiment with reasonable redundancy for MESFET and PHEMT.
出处
《半导体情报》
2001年第4期32-34,44,共4页
Semiconductor Information
