摘要
根据光的吸收机理 ,分析了单粒子效应脉冲激光模拟实验中所需用的脉冲激光的特点 ,探讨了脉冲激光单粒子效应的 Monte Carlo计算模拟途径。在只考虑光电效应的简化下 ,得到存储器硅片单粒子翻转时入射脉冲激光能量阈值与临界电荷的计算关系式 ,进而给出该硅片的翻转截面的计算公式。在给定了存储器硅片的临界电荷的情况下 ,对入射脉冲激光能量阈值和单粒子翻转截面进行了计算。
Based on the light absorption m ec hanism, the characters of the pulsed laser in the pulsed laser simulation of sin gle event upset are analyzed. The Monte Carlo calculated simulation of the pulse d laser simulation of single event upset is put forward. In the simplified case of only considering the photon electrical effect, the relationship be tween the energy threshold of the incident pulsed laser and the critical charge of a silicon chip (or the linear energy transfer) is obtained, a function for ca lculating the upset cross section of the silicon chip is also obtained. The cal culated results show that the energy thr eshold is several picojoules corresponding to the linear energy transfer 0.05pC/ μm. For the critical charge 0.05—0.20pC, the calculated energy threshold is se veral 10 -11 J, the upset cross section is several 10 -16 cm 2. These results can provide reference data for pulsed laser simulation of single event u pset.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2001年第4期436-440,共5页
High Power Laser and Particle Beams
基金
国防预研基金资助课题 ( 96J11.2 .16.KG2 10 6)
