摘要
报道了用化学溶液沉积法采用价格低廉的原料在电阻率为 6～ 9Ω·cm的 n型 Si( 1 0 0 )衬底上生长 Bi4 Ti3 O12 铁电薄膜 ,并对薄膜的性质进行了研究。结果表明此制膜工艺简单 ,成本低 ,制备的 Bi4 Ti3 O12 铁电薄膜具有较低的结晶温度 ,且薄膜均匀 ,致密 ,无裂纹。在 650°C下退火 30 min时得到的 Bi4 Ti3 O12 铁电薄膜具有良好的绝缘性和铁电性 ,薄膜的剩余极化 Pr=4.9μC/cm2 ,矫顽电场 Ec=87k
Polycrystalline Bi 4Ti 3O 12 thin films were prepared by chemical solution deposition technique on n Si(100)( ρ =6~9 Ω·cm) using bismuth nitrate and titanium butoxide as starting material. The films were crack free and dense with smooth surface, and have relatively low crystallization temperature at about 550°C. The films showed good insulating properties. The remament polarization ( Pr ) was 4.9 μC/cm 2, coercive field ( Ec ) was 87 kV/cm for the films annealed at 650°C for 30 minutes.
出处
《化学世界》
CAS
CSCD
北大核心
2001年第6期283-285,共3页
Chemical World
