摘要
利用外腔主动锁模技术,得到了9ps脉宽的1.3μm InGaAsP/InP半导体激光超短脉冲。在外腔中加入法珀标准具后,获得了可调谐变换极限的锁模脉冲。
9ps ultrashort optical pulses of 1.3μm InGaAsP/InP semiconductor laser diode are produced by means of active mode-locking in an external cavity. Tunable bandwidth-limited mode-locking pulses are obtained when a Fabry-Perot etalon is employed in the external cavity.
出处
《激光与红外》
CAS
CSCD
北大核心
1991年第5期54-56,共3页
Laser & Infrared
关键词
半导体激光器
锁模
INGAASP/INP
InGaAsP/InP, external cavity active mode-locking, semiconductor laser
