摘要
简要介绍了前人提出的晶体生长理论的要点及其优点与不足之处;在此基础之上提出了晶体生长理论的发展趋势及晶体生长所面临的基本科学问题;通过分析研究,作者认为晶体生长过程中,介于晶体相与环境相之间的界面相起着重要的作用;重点论述了界面相中的界面层、吸附层和过渡层与晶体生长的关系,并进一步提出了晶体生长的界面相模型。
The advantages and disadvantages of crystal growth theory were simply mentioned. Based on it, we put forward the tendency and the fundamental scientific problems of crystal growth. Throuh analysis, we regard that interface-phase between crystal phase and environmental phase takes the critical role during the crystal growth. We focused on the relationship between crystal growth and the interface-layer adsorptive layer and transitive layer of interface-phase . Furthermore, we put forward the interface-phase model of crystal growth.
出处
《现代技术陶瓷》
CAS
2001年第1期13-18,共6页
Advanced Ceramics
基金
教育部博士点基金(98053301)
关键词
晶体生长理论
发展趋势
界面相
模型
crystal growth developing tendency interface-phase model
