摘要
本文较为系统地描述了 SOI技术的特点 ,分析了 SOI技术中存在的问题和发展的潜力 ,最后得出了 SOI技术将在特征尺寸小于 0 .1 μm、电源电压小于 1
The potential advantages and shortcomings of SOI technology wer discussed in detail in this paper. The trends of developing CMOS/SOI integrated circuits and SOI materials are presented also. At last, the conclusion which the CMOS/SOI technology will become the main technology of IC when the dimension is smaller than 0.1 micron and the supply voltage is lower than 1 voltage is given.
出处
《电子器件》
CAS
2001年第1期72-78,共7页
Chinese Journal of Electron Devices
