摘要
研究了氮气压力对自蔓延高温合成 ＡｌＮ的影响和后烧机理结果表明，自蔓延高温合成 ＡｌＮ 的生长机制为气相－晶体（Ｖａｐｏｒ－Ｃｒｙｓｔａｌ； ＶＣ）机制．气相沉积的台阶平面为 ＡｌＮ的基面（｛０００１｝ 面）．为了降低表面能，生长台阶必须以六棱柱形态形核．在后烧阶段，ＡｌＮ颗粒中心的小台阶被重新“蒸 发”，并沉积到远离中心的大台阶上，使ＡｌＮ颗粒棱角分明，形状规则．随着氮气压力的增加，燃烧温度 逐渐提高，后烧的时间缩短．
Afterburning of SHS AIN under different nitrogen pressure and its mechanism were investigated. The results showed that growth mechanism was the vapor-crystal (VS) one.' AIN vapor,, deposited on the {0001} plane (hasal plane) steps of AIN particles. The little nucleated steps must be regular hexagon in order to decrease surface energy. During afterburning, the little steps at the center will re-vaporize and move to the larger steps, which made AIN particle become regular. With increasing of nitrogen pressure, combustion temperature increased, and the time of afterburning decreased.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2000年第B01期158-162,共5页
Chinese Journal of Materials Research
