摘要
本文介绍利用室温四端法测量用剥离光刻技术和不同rf氧化参量制备的一系列四端Pb—合金隧道结电阻;反映结的氧化物势垒厚度与氧化参量的关系,提供选定rf氧化参量的依据。文中介绍了国外概况,本实验方法的原理,样品制备和测试结果与分析。
The method presented in this paper is that , at room temperature using four terminal method measured resistances of a series four terminal Pb-alloy tunneling junctions prepared in various rf oxidizing parameters and lift off technique, reflects the dependence of oxide barrier thickness on oxidizing parameters, in order to select rf oxidizing parameters. In it, present the situations of abrod, the principle of this method, the sample prepared, and measuring result and a-nalysis.
出处
《低温与超导》
CAS
CSCD
北大核心
1990年第1期30-34,共5页
Cryogenics and Superconductivity
