摘要
本文通过被局域刻蚀硅表面形貌的精确测量,考察了刻蚀速率对于激光功率、波长、反应室气压的依赖关系,讨论了在不同光斑尺寸和刻蚀深度下反应机理的变化,给出了衬底晶向和表面氧化层对刻蚀效果影响的一些新的结果。
The paper examined experimentally laser-induced chemical etching of single-crystal silicon in C12 atmosphere. By accurate measurement of surface configuration of the etched siliocon. etching rates were determined as a function of laser power, wavelength and Clz gas pressure. The change of etching mechanism for different diameter of the light spots and depth of etch hole was discussed. The effect of crystal orientation and surface oxide layer were observed as well.
出处
《河北大学学报（自然科学版）》
CAS
1991年第3期48-52,共5页
Journal of Hebei University(Natural Science Edition)
