摘要
本文从实验上研究了用2MeV ~4He^+背散射对从几十nm到几个μm范围内的各种固体薄膜的厚度进行精确测量的方法。并对各种测量方法和测量结果进行了详细的讨论。
The methods of precisely measuring thin solid film thickness in the range of tens nm to several μm by 2MeV 4He+ Rutherford backseattering are studied. Detailed discussion about different methods and the experimental results are given.
出处
《核技术》
CAS
CSCD
北大核心
1991年第6期326-332,共7页
Nuclear Techniques
关键词
固体
薄膜
厚度
测量
背散射
Thin solid film Thickness measurement Rutherford back scattering
