摘要
用正电子湮没寿命技术研究了 2 .4× 10 15 cm2 和 2 .2× 10 16 cm2 85MeV19F离子辐照GaP的辐照效应。结果表明 ,辐照在GaP中产生浓度较高的单空位 。
The radiation effect of N-type GaP irradiated by 2.4×10 15 /cm 2 and 2.2×10 16 /cm 2 85MeV 19 F ions was investigated by positron annihilation lifetime technique. Monovacancies were created in the irradiated N-type GaP, and the concentration of produced monovacancies increases with the increasing of irradiation fluence.
出处
《核技术》
CAS
CSCD
北大核心
2001年第4期274-276,共3页
Nuclear Techniques
基金
国家自然科学基金! (19835 0 5 0 )
预研基金! (97J11.2 .8HZ0 10 )资助
