摘要
本文提出了用光学混合技术测定光电导材料输运参量的新方法。He～Ne激光的多纵模在n型GaAs样品上的混合,可获得该样品的光电流和三倍差频的微波功率信号,经把光电导外差分析方法推广后,可得出载流子寿命、迁移率、漂移速度等参量对所加电场的依赖关系和它们的温度特性。并在20K～240K的温度区间,讨论了该样品的复合机构和散射机构。
The technique of photomixing to measure the transport parameters for photo-conductive materials was developed. When the multimodes He-Ne Laser beam was incident upon the n-type GaAs sample, the carrier generation rate would be modulated at the beating frequency and microwave signal could be detected. By popularizing the heterodyne analysis method, we determined the dependance of the carrier lifetime, mobility and drift velocity on electric field, as well as their temperature properties. The recombination and scattering mechanisms were discussed from the experimental data between 20K to 240K temperature region.
