摘要
偿试性的在Ｐ—ＣａＡｓ衬底上采用液相外延技术，研制成了双异质结（ＤＨ）平面结构可见光半导体激光器．其波长为７９４．５ｎｍ，阈值电流为３Ａ，垂直结平面和平行结平面的光场强度发散角分别为１５°和２５°，三倍阈值电流工作时单面输出光功率为２～３Ｗ．
Using LPE (Liquid phase epitaxial) technique on P-GaAs substrate, the visible semiconductor lasers with DH planar structure has been fabricated, Its wavelength is 794. 5nm,threshold current 3A. The divergence angles of the light intensity distribution, parallel and perpendicular to the junctionplane, are 15°and 20° respectively. The light output power is 2-3W/ face at 31th.
出处
《河北工学院学报》
1995年第1期88-91,共4页
Journal of Hubei Polytechnic University
