摘要
采用高温固相法制备不同含量Gd3+敏化的白光荧光粉Ba1.3Ca0.65-xSiO4:0.02Eu2+,0.03Mn2+,xGd3+(x=0~6%).XRD结果表明:合成的荧光粉是六方晶系Ba1.3Ca0.7SiO4结构.荧光光谱测试表明:荧光粉在近紫外光275~410 nm具有较强吸收;且发射光谱由蓝绿光波带(425~560 nm)和橙红光波带(560~650 nm)组成.Gd3+的掺杂能够明显提高其发射强度,其中较佳Gd3+掺杂量为2%.Ba1.3Ca0.63SiO4:0.02Eu2+,0.03Mn2+,0.02Gd3+荧光粉的色坐标CIE为(0.343 1,0.331 8),色温Tc=5 010 K,显色指数Ra=81.7,是一种适合于近紫外光芯片InGaN激发的WLED用全色荧光粉.
White Light-emitting phosphors Ba1.3Ca0.65-xSiO4：0.02Eu^2＋,0.03Mn^2＋,xGd^3＋（x =0 ～6 %）sensitized by different ratios of Gd3＋,were synthesized by high-temperature solid-state reaction.The XRD results showed that these phosphors were Ba1.31Ca0.69SiO4 patterns with hexagonal system.Fluorescence spectra showed that this phosphor had a strong absorption in the near ultraviolet light 275 ～ 410 nm,and the emission spectra consisted of blue-green light（425 ～ 560 nm） and orange-red light（560 ～ 650 nm）.The luminescent intensity of phosphors was enhanced obviously by doping Gd3 ＋ion,and reached an optimum when Gd3＋ amounted to 2%.The Ba1.3Ca0.63SiO4： 0.02Eu^2＋,0.03Mn^2＋,0.02Gd^3＋ phosphor with color coordinate CIE（0.343 1,0.331 8）,correlated color temperature Tc= 5 010 K,color rendering index Ra=81.7,which was suitable for full-color phosphor for white-LED excited by near-UV InGaN chip.
出处
《沈阳化工大学学报》
CAS
2014年第2期101-105,共5页
Journal of Shenyang University of Chemical Technology
基金
辽宁省教育厅科研项目(LS 2010119)
辽宁省自然科学基金项目(LS 201102174)
关键词
白光荧光粉
发光二极管
光色参数
white phosphor
light emitting diode
light-color parameters
