摘要
通过ＦＴ－ＩＲ、ＸＰＳ和荧光光谱研究了离子注入对纳米Ｓｉ３Ｎ４结构的影响．发现离子注入改变了材料中游离硅（ａ－Ｓｉ）的结构，使其变成了ＳｉＮｎ（ｎ＝１，２）．荧光谱研究表明纳米Ｓｉ３Ｎ４具有明显的量子限制效应，并且荧光峰的位置和强度存在不稳定性．根据实验结果给出了纳米Ｓｉ３Ｎ４的能级结构图.
The effects of ion implantation on the structure of nano-Si3N4 was studied by means of FT-IR, XPS and photoluminescence spectra. The energy level scheme and the energy structure of nano-Si3N4 were given. The results show that ion implantation makes free Si in the material change to SiNn(n=1, 2), and nano-Si3N4 possesses a quantum confinement effect, and its photoluminescence peak position and intensity are unstable.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第2期369-372,共4页
Journal of Inorganic Materials
