摘要
采用NPB掺杂石墨烯作为空穴传输层,制备有机电致发光器件(OLED),器件结构为ITO/NPB:Graphene(20wt.%)(50nm)/Alq3(80nm)/LiF(0.5nm)/Al(120nm)。将其与标准器件ITO/NPB(50nm)/Alq3(80nm)/LiF(0.5nm)/Al(120nm)作性能比较,研究石墨烯对OLED性能的影响。结果表明,在NPB中掺杂石墨烯薄层的器件,在同等条件下性能最佳,当电流密度为90mA/cm2时器件电流效率达到最大值3.40cd/A,与标准器件最高效率相比增大1.49倍;亮度在15V时达到最大值10 070cd/m2,比标准器件最大亮度增大5.16倍。
The organic light emitting diode（OLED）was fabricated,which uses graphene doped in NPB as the hole transport layer.The structure of the device is ITO/NPB：Graphene（20wt.%）（50nm）/Alq3（80nm）/LiF（0.5nm）/Al（120nm）.We compare it with the standard device whose structure is ITO/NPB（50nm）/Alq3（80nm）/LiF（0.5nm）/Al（120nm）.The effect of graphene on performance of OLED is investigated.The results show that the device with graphene doped NPB layer presents better performance under the same conditions.When the current density is 90mA/cm2,the current efficiency reaches the maximum value of 3.40cd/A,and compared with the standard device,the maximum efficiency is increased by 1.49times.The device reaches the maximum luminance of 10 070cd/m2 when the driving voltage is 15V,which is increased by 5.16times than that of the standard device.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2014年第6期1054-1057,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金(61177019
61176048)
吉林省基础研究计划基金(20100510)
吉林省科技发展(20101512
201215221)
吉林省教育厅"十二五"科学技术研究(2011154
2012176
2013208)
四平市科技计划(2012038)资助项目
