期刊文献+

IGBT模块焊料层空洞对模块温度影响的研究 被引量:14

Influence of Solder Void to Thermal Distribution of IGBT Module
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摘要 介绍了IGBT模块的封装工艺,分析真空回流焊接过程中焊料层空洞的形成机理,并使用SAM方法检测并测量空洞;接着通过有限元模拟方法对模块进行热分析,对比了焊料层有、无空洞情况下模块的整体温度,具体研究焊料层空洞尺寸、空洞分布位置和焊料层厚度对芯片温度分布的影响。 The packaging process of IGBT module is introduced,the formation mechanism of the solder void is analyzed,and SAM( Scanning Acoustic Microscope) method is used to detect and measure the voids. Besides,FEA( Finite Element Analysis) method is chosen to analyze the thermal performance of IGBT module. Commercial finite element software is used to compare the temperature distribution of module with and without solder void. Moreover,the relationship between void size,void location,solder thickness and thermal performance of chip are studied.
出处 《中国电子科学研究院学报》 2014年第2期125-129,共5页 Journal of China Academy of Electronics and Information Technology
基金 国家863高技术基金项目(2011AA050401)
关键词 IGBT 焊料层空洞 有限元分析 热分析 可靠性 IGBT solder void FEA thermal analysis reliability
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参考文献12

  • 1OTIABA K C,BHATTI R S,EKERE N N,et al.Thermal Effects of Die-Attach Voids Location and Style on Performance of Chip Level Package[C]//In Adaptive Science and Technology(ICAST),3rd IEEE International Conference,2011:231-6.
  • 2FLEISCHER A S,CHANG L H,JOHNSON B C.The Effect of Die Attach Voiding on the Thermal Resistance of Chip Level Packages[J].Microelectronics Reliability,2006,46(5-6):794-804.
  • 3LIU Y.Power Electronic Packaging:Design,Assembly Process,Reliability and Modeling[M].Germany:Springer,2012.
  • 4丁杰,唐玉兔,忻力,张陈林,胡昌发.IGBT模块封装的热性能分析[J].机车电传动,2013(2):9-12. 被引量:21
  • 5施建根,孙伟锋,景伟平,孙海燕,高国华.车载IGBT器件封装装片工艺中空洞的失效研究[J].电子与封装,2010,10(2):23-27. 被引量:13
  • 6张小玲,张健,谢雪松,吕长志.IGBT热特性的仿真及焊料层分析[J].功能材料与器件学报,2011,17(6):555-558. 被引量:12
  • 7张雨秋,刘玉敏.智能功率模块的封装结构和发展趋势[J].电子与封装,2009,9(4):4-7. 被引量:2
  • 8XU L H,PANG J H L,CHEF X.Impact of Thermal Cyc-ling on Sn-Ag-Cu Solder Joints and Board-Level Drop Reliability[J].Journal of Electronic Materials,2008,37 (6):880-6.
  • 9ONUKI,J,CHONAN,Y,al.Influence of Soldering Conditions on Void Formation in Large-Area Solder Joints[J].Materials Transactions.2002,43 (7):1774-7.
  • 10ZHAI M,GUO MJ.Effect of High-Temperature Solder Void on Heat Dissipation Performance of Smart Power Module[C]//International Conference on Electronics and Optoe-lectronics.Dalian,China:IEEE Computer Society.2011(1):1404-6.

二级参考文献15

  • 1Ulrich Nicolai,Tobias Reimann,李毅,魏宇浩.现代功率模块及器件应用技术(2)[J].电源技术应用,2005,8(2):56-62. 被引量:3
  • 2Jack Wojslawowicz,Jim Gillberg.分立元件IGBT应用趋势 汽车点火装置向小型化和智能化方向发展[J].电子与电脑,2005,5(9):66-68. 被引量:2
  • 3陈云,徐晨.有限元分析软件ANSYS在多芯片组件热分析中的应用[J].电子工程师,2007,33(2):9-11. 被引量:14
  • 4Khanna V. K. , Power IGBT design and characterization by two - dimensional thermal Simulation [ J ]. J. Physics of semiconductor devices ,2002, 4746 (2) : 436 - 439.
  • 5R. Azar, F. Udrea, Advanced Electrothermal SPICE Model- ling of Large Power IGBTS [ J ] . IEE Proc. - Circuits De- vices Syst. , 2004,151(3) :249 -253.
  • 6X Perpinal, X Jordal, N Mestres. Internal infrared laser de- flection system: a tool for power device characterization [ J ] J, Meas. Sci. Technol 2004,15 (5) : 1011 - 1018,.
  • 7KOKKAS A G. Empirical Relationships between Thermal Conductivity and Temperature for Silicon and Germanium [J]. RCA Review, 1974,35(4) :579 -581.
  • 8S Narumanchi, M Mihalic, K Kelly. Thermal interface materials for power electronics applications J ], National Renewable Energy Laboratory Conference Paper, 2008.
  • 9Bai J G, Zhang Z Z, Calata J N, et al. Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material [ J 1 IEEE Tractions on Com- ponents and Packaging Technology, 2006, 29(3): 589-593.
  • 10N B Nguyen. Properly implementing thermal spreading will cut cost while improving device reliability [J]. ium on Microelectronics, 1996, 385-386.

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