摘要
目的 观察635/808 nm双波长半导体激光与氦氖（He-Ne）激光低强度照射对手术切口愈合疗效的比较.方法 选择非恶性肿瘤手术患者168例,随机分为2组,试验组83例,手术切口予以半导体激光治疗仪低强度照射;阳性对照组85例,手术切口予以He-Ne激光治疗仪照射,以伤口红、肿、热、痛、渗出、裂开等临床表现和不良事件以及切口长度差距为指标观察2组手术切口愈合情况.结果 试验组和对照组切口愈合情况差异无统计学意义（P＞0.05）.结论 双波长半导体激光照射对手术切口愈合的疗效与He-Ne激光治疗效果相当.
Objective To compare healing effects of surgical incisions using 635 /808 nm dual- wavelength semiconductor laser and He-Ne laser irradiation. Methods 168 cases of non-malignant tumor surgery patients were randomly divided into 2 groups： test group including 83 cases which were treated on the surgical incisions by laser irradiation of the semiconductor illumination with low-intensity power; positive control group with 85 cases treated with He-Ne laser. Observation was carried out on incision healing by the clinic manifestations including redness, heat, swelling, pain, exudation, wound open, adverse event and the incision length offset. Results There was no significant difference between experimental group and the control group on incision healing （P〉0.05）. Conclusions The treatment efficacy of the dual-wavelength semiconductor laser on surgical incisions healing is similar with that of the He-Ne laser.
出处
《国际生物医学工程杂志》
CAS
2014年第2期111-114,共4页
International Journal of Biomedical Engineering
