摘要
采用溶胶-凝胶和旋涂抽滤方法,在硅微通道(Si-MCP)衬底的内壁上涂敷前驱物,然后分别在600℃,650℃,700℃和750℃条件下制备Bi3.15Nd0.85Ti3O12/Si-MCP微纳薄膜阵列,并对其结构及铁电特性进行表征.研究结果显示,退火温度越高,Si-MCP内被局域化的微纳薄膜结晶颗粒尺寸越大,同时BNT/Si-MCP微纳薄膜阵列越趋向沿c轴取向,尤其在750℃下制备的薄膜具有表面形貌均匀和c轴取向程度高等优点,且剩余极化强度可达93.8μC/cm2.
The micro/nano -scale Bi3.15Nd0.85 Ti3O12/Si-MCP （BNT/Si-MCP） ferroelectric thin film arrays were fabri- cated successfully by the sol-gel, spin-coating and pumping filtration methods. Precursors of BNT were coated on the in- ner wall of Si-MCP. Bi3.15 Nd0.85 Ti3O12 thin film supported by Si-MCP were prepared via annealing in oxygen atmos- phere at 600 ℃, 650℃, 700 ℃ and 750 ℃, respectively. The ferroelectric properties and microstructures of BNT/Si- MCP film arrays were characterized. The results show that with the increase of annealing temperature, the size of BNT grain localized on the inner wall of Si-MCP increases, the uniformity of the surface and the degree of orientation along the c-axis increase, too. The largest remanent polarization （93.8 μC/cm2 ） and lowest leakage current of the micro/ nano-scale BNT/Si-MCP arrays were obtained annealing at 750 ℃.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2014年第2期139-142,148,共5页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金(61204127)
中国博士后科学基金面上项目(2012M510898)
黑龙江普通高等学校新世纪优秀人才培养计划(1253-NECT025)
黑龙江省自然科学基金(F201332)~~
