In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱二维电子气中的零场自旋分裂与塞曼分裂

The zero field spin splitting and Zeeman splitting in the In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As quantum well

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摘要利用变角度磁输运方法研究了高迁移率、高浓度、宽度为20 nm、单边δ掺杂的In0.53Ga0.47As/In0.52Al0.48As量子阱,根据量子阱平面与磁场不同夹角时SdH振荡的拍频节点移动,提取了其自旋分裂能Δ0和有效g因子|g*|,发现Δ0随浓度增加而增大,|g*|随浓度增加而减小.进一步的分析和计算表明,|g*|减小是由量子阱能带结构的非抛物性作用引起的. The zero-field spin splitting and Zeeman splitting in the In0.53Ga0.47As/In0.52Al0.48As quantum well （QW） were extracted by a Shubnikov-de Haas oscillations （SdH） beating pattern analysis under different tilt angles between QW plane and external magnetic field. It is found that the zero-field spin splitting △0 increases with increasing carrier concen- tration while the effective g-factor ｜g＊｜ decreases. The further calculation indicated that the decrease of ｜g＊｜ with con- centration is ascribed to the nonparabolic effect of the band structure.

作者刘新智徐勇刚俞国林林铁郭少令褚君浩张永刚

机构地区中国科学院上海技术物理研究所中国科学院上海微系统研究所

出处《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2014年第2期134-138,共5页 Journal of Infrared and Millimeter Waves

基金国家重点基础研究发展计划(973计划)(2013CB922301 2012CB619204) 国家自然科学基金(60976093 10934007 11174306)~~

关键词 INGAAS InAlAs量子阱零场自旋分裂塞曼分裂有效g因子 InGaAs/InA1As quantum well, zero-field spin splitting, Zeeman splitting, effective g-factor

分类号 O471.5 [理学—半导体物理]

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红外与毫米波学报

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In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱二维电子气中的零场自旋分裂与塞曼分裂

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