摘要
硅晶体与无氧铜界面之间的接触热阻影响第三代同步辐射光源中承受高热负荷的硅晶体单色器冷却结构性能优化设计。实际测量固体界面处接触热阻时,温度传感器安装方式和加热功率均影响实验准确性。文中利用数值模拟方法从这两方面对接触热阻计算偏差进行分析。结果表明,焊接或粘贴方式安装温度传感器使测温更加接近真实情况,并且测量接触热阻越小,加热功率可调范围越小,对测量仪器精度要求越高,进而对实际测量方法的选择有现实指导意义。
The thermal contact resistance between the silicon crystal and oxygen -free copper interface effects the perform- ance optimization for cooling structure design of silicon crystal monochromator under high heat load in the third - generation syn- chrotron radiation source. Temperature sensor installation and heating power have affected the accuracy of the experiment in the actual measurement of thermal contact resistance at the solid interface. Therefore, this paper used numerical simulation methods to calculate these two aspects of the thermal contact resistance deviation for analysis. The results show that temperature sensors installation by welding or sticking can present more consistent with the real condition. In addition, the smaller the thermal contact resistance is, the smaller the heating power adjustable range and the higher the precision of the measuring instrument requires. And then it has practical guiding significance to select the actual measurement method.
出处
《低温与超导》
CAS
北大核心
2014年第4期8-11,16,共5页
Cryogenics and Superconductivity
关键词
接触热阻
液氮冷却硅晶体单色器
无氧铜
硅晶体
加热功率
Thermal contact resistance, Liquid nitrogen- cooled silicon crystal monochromator, Oxygen- free copper, Silicon, Heating power
