期刊文献+

F,Na共掺杂p型ZnO的第一性原理研究 被引量:8

First-principles study on p-type ZnO codoped with F and Na
原文传递
导出
摘要 本文基于密度泛函理论(DFT),用第一性原理的方法,计算了ZnO在掺杂F和Na情况下的电子态密度、有效质量和形成能,研究分析了掺杂对ZnO的影响,结果表明:单掺F或Na并不能得到p型ZnO;而将F和Na共掺,能够使ZnO表现出p型导电的倾向.尤其当F和Na按1:2的原子比例共掺时,能够获得p型ZnO,这可以为实验上制备p型ZnO提供参考依据. The first-principles calculations based on the density functional theory have been performed to investigate the doping behaviors of Na and F dopants in ZnO. It turns out from the calculated results of the band structure, density of states, and effective masses that in the F mono-doping case, the impurity states are localized and the formation energy is up as high as 4.59 eV. In the Na mono-doping case, the impurity states are delocalized and the formation energy decreases as low as -3.01 eV. One cannot obtain p-type ZnO in both instances On the contrary, in the Na-F codoping case, especially when the ratio of F and Na is 1:2, the Fermi-level shifts to the valence bands, the corresponding effective masses are small (0.7rn0) and the formation energy is the lowest (-3.55 eV). These may indicate the formation of p-type ZnO having a good conductivity.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2014年第7期283-288,共6页 Acta Physica Sinica
关键词 共掺杂 P型ZNO 第一性原理 态密度 codoping, p-type ZnO, first-principles, density of states
  • 相关文献

参考文献24

  • 1Bagnall D M, Chen Y F, Zhu Z, Yao Z, Koyama S, Shen M Y, Goto T 1997 Appl. Phys. Lett. 70 2230.
  • 2Look DC, Reynolds DC, Litton C W,Jones R L, Eason D B, Cantwell G 2002 Appl. Phys. Lett. 81 1830.
  • 3Vispute R D, Talyansky V, Choopun S, Sharma R P, Venkatesan T, He M, Tang X, HalpernJ B, Spencer M G, Li Y X, Slarnanca-Riba L G, Lliadis A A,Jones K A 1998 Appl. Phys. Lett. 73 348.
  • 4Li YJ, Heo Y W, Kwon Y, Lp K, Pearton SJ, Norton D P 2005 Appl. Phys. Lett. 87 072101.
  • 5Vaithianathan V, Lee B T, Chang C H, Asokan K, Kim S S 2006 App!. Phys. Lett. 88 112103.
  • 6Wang G P, Chu S, Zhan N, Lin Y Q, Chernyak L, LiuJ L 2011 Appl. Phys. Lett. 98 041107.
  • 7Friedrich F, Sieber L, Klimm C, Klaus M, Genzel C, Nickel N H 2011 Appl. Phys. Lett. 98 131902.
  • 8Zhang Z, Knutsen K E, Merz T, Kuznetsov A Y, Svens?son B G, Brillson LJ 2012 Appl. Phys. Lett. 100042107.
  • 9Lin S S, He H P, Lu Y F 2009J. Appl. Phys. 106093508.
  • 10Yamamoto T, Katayama Y H 1999J. Appl. Phys. 38 166.

共引文献1

同被引文献58

  • 1崔航,段振豪,张志刚.通过第一性原理预测内地核的成分与结构[J].岩石学报,2010,26(4):1322-1328. 被引量:2
  • 2张金奎,邓胜华,金慧,刘悦林.ZnO电子结构和p型传导特性的第一性原理研究[J].物理学报,2007,56(9):5371-5375. 被引量:29
  • 3TAN Y N,CH1M W K,CHOI W K,et al. High-K HfA10 charge trapping layer in SONOS-type nonvolatile memory device for high-speed operation[C]//Proc of IEEE Interna- tional Electron Devices Meeting, SanFrancisco, USA, 2004 : 889-892.
  • 4YANG H J,CHENG C F,CHEN W B,et ak Comparison of MONOS memory device integrity when using Hfl_xyN~Oy trapping layers with different N compositions EJ3. IEEE Transactions on Elect ron Devices, 2008,55 (6) : 1417-1423.
  • 5SPIGA S, DRIUSSI F, LAMPERTI A, et al. Effects of ther- mal treatments on the trapping properties of HfOz films for charge trap memories[J]. Applied Physics Express, 2012,5 (2) :021102.
  • 6ZHANG Haowei, GAO Bin, SUN Bing, et al. Ionic doping effect in ZrO2 resistive switching memoryl-J3. Applied Phys- ics Letters,2010,96(12) : 128502-1-3.
  • 7Hou Z F,Gong X G, Li Q. Energetics and electronic struc- ture of aluminum point defects in HfOz : a first-principles studyl[J].Journal of Applied Physics,2009,106(1) :014104- 1-6.
  • 8WANG L G, XIONG Y, XIAO W, et al. Computational in- vestigation of the phase stability and the electronic proper- ties for Gd-doped HfO2[J]. Applied Physics Letters, 2014, 104(20) : 201903-1-4.
  • 9LEE C K, CHO E, LEE H S, et al. First-principles study on doping and phase stabilily of HfO2 [J]. Physical Review B,2008,78(1) :012102-1-4.
  • 10KRESSE G, FURTHMULLER J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set [J].Computational Materials Science, 1996,6(1) : 15-50.

引证文献8

二级引证文献29

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部