摘要
报道了镍诱导非晶硅薄膜的晶化技术 ,探讨了镍诱导晶化机理 .详细调查了诱导晶化时间和温度对晶化速率的影响 ,并用 Raman、AFM和 TEM等测试了材料的特性 .实验结果发现用该方法可以获得较大晶粒的多晶 ;在晶化温度为 6 2 5℃左右时晶体横向晶化速率最高 .如要获得较长的晶体 。
Ni- induced lateral crystallization of amorphous silicon thin films has been proposed.Its m echanism has also been dis- cussed.The effect of annealing temperature and tim e on the Metal Induced L ateral Characterization( MIL C) rate has been in- vestigated in detail.The film was characterized by Ram an,AFM and TEM etc.The experimental results show thatlarge grains are easily achieved by MIL C.The highest MIL C rate was obtained at the annealing temperature of about6 2 5℃ ,while longer MIL C film was more easily achieved at lower tem perature.
