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高锰酸钾溶液对核径迹敏化新现象的研究

New phenomenon of potassium permanganate treatment effect in polymer irradiated with heavy ions
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摘要 利用电导法研究高锰酸钾溶液预处理对聚对苯二甲酸乙二酯膜(PET)蚀刻速率的影响,用不同浓度的高锰酸钾溶液预处理1 h、2 h、3 h、4 h、5 h、6 h,径迹蚀刻速率在2 h时达到峰值,之后随预处理时间的增长而下降,基体蚀刻速率随预处理时间的增长而变小,半锥角随预处理时间增长而减小。在0.1 mol·L-1高锰酸钾溶液中分别加入5%、15%、25%、35%的2 mol·L-1硫酸溶液,实验结果表明,酸性高锰酸钾对径迹蚀刻速率影响较小,基体蚀刻速率随硫酸量的增加而变大,半锥角也相应地增大。另外,电导法中所用的直流电压大小对径迹蚀刻速率也有影响。 Background: Nuclear track membranes offer distinct advantages over conventional membranes due to their precisely determined structure. Their pore size, shape and density can be controlled intentionally so that a membrane with the required characteristics can be produced. The track etching technology plays an important role in the production of nuclear track membranes. Purpose: The effect of potassium permanganate solution pretreatment on the etching rate for polyethylene terephthalate film (PET) is studied in this work. Methods: The conductivity method is used in this research. Under different conditions, the PET films were pretreated for 1 h, 2 h, 3 h, 4 h, 5 h and 6 h by potassium permanganate solution. 5%, 15%, 25% , 35% of 2-mol.L-1 sulfuric acid solutions were added in 0.1 mol.L-1 potassium permanganate solution. Results: Track etching rate reached a peak at 2 h, Afterwards, with the pretreatment time increasing, the track etching rate declined, and the longer of the pretreatment time, the smaller of the bulk etching rate. Half cone angle either. Adding to sulfuric solution, the experimental results show that the effect on track etching rate is small, with the amount of sulfuric acid increasing, bulk etching rate becomes larger, the same change with half cone angle. In addition, the DC voltage used in the conductivity method also has impact on the track etching rate. Conclusion: The experiment has provided a method to improve the etching rate.
出处 《核技术》 CAS CSCD 北大核心 2014年第3期50-53,共4页 Nuclear Techniques
基金 国家自然科学基金项目(No.11075218)资助 核技术应用教育部工程研究中心(东华理工大学)开放基金(No.HJSJYB2011-10)资助
关键词 高锰酸钾溶液 径迹蚀刻速率 基体蚀刻速率 半锥角 Potassium permanganate solution, Track etching rate, Bulk etching rate, Half cone angle
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参考文献8

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