摘要
报道了以Si( 111)为衬底的GaN光导型紫外探测器的制备及其光电流性质。探测器的光谱响应表明 ,这种GaN探测器在紫外波段 2 50～ 360nm有近于平坦的光电流响应 ,363nm附近有陡峭的截止边。在 357nm波长处 ,测得 5V偏压下的响应度高达 6.9A/W。响应度随外加偏压的增加而增加 ,5V时达到饱和。通过拟合光电流响应随入射光调制频率的变化关系 ,得到GaN探测器的响应时间为 4 .8ms。
Fabrication and characterization of GaN ultraviolet detectors based on Si(111) are reported. The detectors exhibit a high and flat responsibility in UV region with the wavelength from 250nm to 360nm and a sharp cut off at 363nm. At 357nm, a maximum responsibility of 6.9A/W is achieved under 5V bias. The relationship between the responsibility and the bias voltage shows that the responsibility is saturated when the bias voltage reaches 5V. The response time is 4.8ms measured by photocurrent versus modulated frequency.
出处
《高技术通讯》
EI
CAS
CSCD
2000年第11期16-18,共3页
Chinese High Technology Letters
基金
863计划
国家自然科学基金!(6 99870 0 1
6 96 36 0 10
6 980 6 0 0 6 )资助项目
