摘要
分别以Zn粉和S粉为原材料，Ga为掺杂剂，Au纳米颗粒为催化剂，采用低温化学气相沉积法（CVD），在Si（100）衬底上制备了Ga掺杂的ZnS纳米结构。利用X射线衍射仪（XRD）、能量弥散X-ray谱（EDS）、场发射扫描电子显微镜（SEM）和光致发光光谱（PL）等测试手段对样品的结构、成分、形貌和发光性能进行了分析。结果表明：随着温度的升高（450—550℃），Ga掺杂ZnS纳米结构的形貌发生了从蠕虫状纳米线到光滑纳米线再到纳米棒的演变，所制备的Ga掺杂的ZnS纳米结构均为六方纤锌矿结构，分别在波长为336nm和675nm处存在一个较强的近带边紫外发射峰和一个Ga掺杂引起的微弱红光峰，而其它发光峰均是缺陷引起的。此外，本文还对Ga掺杂ZnS纳米结构的形成过程进行了探讨，并提出了可能的形成机理。
Ga-doped ZnS nanostructures were prepared on Si （100） substrate by low-temperature chemical vapor deposition （ CVD）, using S powder and Zn powder as raw material, Ga as dopant and Au nanoparticles as catalyst. The structure, composition, morphology and luminescent properties of ZnS samples were analyzed by X-ray diffraction （XRD）, energy dispersive X-ray spectroscopy （EDS）, field emission scanning electron microscopy （SEM） and photoluminescence （PL） spectroscopy, respectively. The results indicate that with the increase of the temperature, the morphologies of Ga-doped ZnS evolved from worm-like nanowires to smooth nanowires and then to nanorods. All samples were hexagonal wurtzite, and showed a larger near-band-edge UV emission peak of 336 nm and a weak red light emission peak of 675 nm, while all other emission peaks were caused by defects of Ga doping. Furthermore, the possible growth mechanism of Ga-doped ZnS nanostructures were proposed on the basis of experimental observations and analysis.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2014年第1期31-37,共7页
Journal of Synthetic Crystals
基金
国家自然科学基金(51002102)
山西省科技创新重点团队项目(2012041011)
