摘要
基于Double RESURF 700VBCD工艺平台,提出了一种夹断电压可调的高压结性场效应管(J-FET)。这种J-FET的夹断是通过栅源反偏引起的N阱(N-well)表面耗尽和衬源反偏引起的底部耗尽共同作用结果,故夹断电压可受J-FET的栅电位调制。同时通过改变高压J-FET的P型埋层(P-buried)掩膜窗口的大小和间距,来改变P-buried和N-well的杂质浓度分布,达到改变J-FET夹断电压的目的。在不增加工艺步骤和改变原有工艺条件的情况下,通过实验得到击穿电压大于700V,夹断电压在8V和17V之间可自由调整的高压J-FET器件。该器件可以作为启动器件和供电模块的线性调整器件使用。由于其夹断电压受P-buried注入版图尺寸的影响,同时受栅电位调制,所以可以满足线路设计者的不同要求。
Based on Double RESURF 700 V BCD process, a novel pinch-off voltage-adjusta- ble high-voltage junction field-effect transistor （J-FET） is proposed. The channel of N type well （N-well） is pinched off by means of the surface depletion and the bottom depletion. The surface depletion is determined by the reverse bias voltage of gate-source, while the bottom depletion is determined by the reverse bias voltage of substrate-source. In the end, the pinch-off voltage is found to be dependent on the gate-bias voltage, and it can also be designed by changing the p type buried （P-buried） doping, which is achieved by adjusting the ratio of the width to spacing of P- buried mask windows. The high-voltage J-FETs with pinch-off voltages between 8 V and 17 V and reverse blocking voltages of more than 700 V have been obtained, neither adding nor chan- ging any process step. In the linear regulators and DC-DC and AC-DC converters, the J-FETs with designable, adjustable pinch-off voltages are easy to be used as different start-up devices and linear regulating transistors.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第1期75-80,共6页
Research & Progress of SSE
基金
江苏省333工程科研项目(BRA2011112)
