摘要
采用循环伏安法(CV)对离子液体Reline中三元CuCl2+InCl3+SeCl4体系和四元CuCl2+InCl3+GaCl3+SeCl4体系的电化学行为进行了研究。研究表明,In3+并入三元CIS(Cu-In-Se)薄膜体系和Ga3+并入四元CIGS(Cu-In-Ga-Se)薄膜体系均有两种途径:一是发生共沉积,二是直接还原。利用电感耦合等离子体发射光谱(ICP)和扫描电镜(SEM)对沉积电势、镀液温度和主盐浓度对CIGS薄膜组成、镀层表面形貌的影响进行了测试,结果表明通过工艺参数的选择可以控制Ga/(Ga+In)和CIGS薄膜组成并得到化学计量比为Cu1.00In0.78Ga0.27Se2.13的薄膜。
The electrochemical behavior of CuInxGa1-xSe2 （CIGS） was investigated by cyclic voltammetry （CV） in ionic liquid Reline. The insertion of indium （In） into the CISthin films involved two routes： co-deposition with Cu2＋ and Se or trivalent indium ion （In3＋）. The insertion of gallium （Ga） into the quaternary solid phase （Cu-In-Ga-Se） utilized two routes： co-deposition （with Cu2＋, In3＋, Se4＋） and Ga3＋ directly added to Ga. The effects of electrodeposition potential, bath temperature and main salt concentration on CIGSthin films were researched. Cu1.00In0.78Ga0.27Se2.13 thin films were obtained and satisfactory control of film composition and Ga/（Ga＋In） was achieved by the choice of process parameters. The standard CIGSsample was calibrated by an inductively coupled plasma optical emission. The morphological properties were detected by scanning electron microscopy. The XRDresult shows that the incorporation of Ga into CISphase and forms CIGSphase.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2014年第2期466-472,共7页
Chinese Journal of Inorganic Chemistry
基金
黑龙江省自然科学基金重点(No.ZD201107)资助项目~~
关键词
离子液体
电化学行为
电沉积
CIGS薄膜
ionic liquid
electrochemical behavior
electrodeposition
CIGS thin films
